US-based Micron Technology plans to invest around 100 billion yen (US$866 million) to increase DRAM (Dynamic Random Access Memory) production in a Hiroshima factory in Japan, along with an effort to raise outputs of its joint venture Inotera Memories in Taiwan, reported Nikkei on November 11. The company will implement 20-nanometer technology in both factories, aiming to uplift overall chip capacity by 20%. Micron has earmarked US$3.8 billion in capital expenditure worldwide this fiscal year, with half of that to be spent on DRAMs.